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James Tsang
Research
Staff Member
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Dr.
Tsang - A native of New
York City, Dr. Tsang did his undergraduate and
graduate work at the Massachusetts Institute of Technology, receiving a
PhD in Electrical Engineering in 1973 and has been a member of the
research staff at the IBM T.
J. Watson Research
Center since then. Dr. Tsang
has been made numerous contributions in the use of optical techniques to
characterize materials, interfaces, and devices. He has 7 patents, 158
published papers, and four IBM Innovation awards.
He
has contributed to our understanding of crystal symmetry forbidden phonon
excitations in magnetic semiconductors, soft modes in charge density wave
systems, the mechanisms responsible for surface enhanced Raman
scattering, the growth of silicide layers on crystalline Si, the
interface between silicon and germanium in silicon germanium systems, and
hot carrier processes in III-V semiconductors. In recent years, he has applied his
ability to measure weak optical signals to the development of new tools
for the test and detection of failures in integrate circuits, the exploration of the electro-optic
properties of carbon nanotube field effect transistors and the
characterization of carbon nanotubes.
James
Tsang is a Fellow of the American Physical Society, and the American
Association for the Advancement of Science, and a senior member of IEEE.
He served the technical community as an AAAS-Sloan Foundation Fellow in
the White Office of Science and Technology Policy (1993-94), and as a two
term member and ultimately chair of the American Physical Society’s
Panel of Public Affairs in 2001. In the later role, he led the APS
response to the Nimov and Schon cases of research misconduct.
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