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Nanotube field-effect transistor |
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Transistors are the basic building blocks of integrated circuits. To use nanotubes in future circuits it is essential to be able to make transistors from them. We have successfully fabricated and tested
nanotube transistors using individual multi-wall or single-wall nanotubes as the channel of a field-effect transistor (FET). |
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We measure the electrical characteristics of our nanotube-FETs and find that we can change the amount of current (ISD) flowing through the nanotube channel by a factor of 100,000 by changing the
voltage applied to a gate (VG), as can be seen in our data below. G is the low bias conductance of the tube. |
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This work has been published in Applied Physics Letters, vol 73, p. 2447 (1998) |
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As we cool the FET down from room temperature to 4 degree Kelvin (minus 460 degree Fahrenheit) we see the device behavior change dramatically. While the device acts like a field-effect transistor at room
temperature, at 4K it behaves like a single-electron transistor (SET). The three plots below show this change in device behavior for different temperatures. |
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