Siegfried F. Karg IBM Research Division, Zurich Research Laboratory, Säumerstrasse 4, 8803 Rüschlikon, Switzerland (sfkzurich.ibm.com). Dr. Karg is a Research Staff Member at the IBM Zurich Research Laboratory. He received his Ph.D. degree in physics from the University of Bayreuth in 1994. Dr. Karg's research interests include the device physics of resistive-oxide memory, organic semiconductors, and nanoscale electronics.

G. Ingmar Meijer IBM Research Division, Zurich Research Laboratory, Säumerstrasse 4, 8803 Rüschlikon, Switzerland (inmzurich.ibm.com). Dr. Meijer is a Research Staff Member at the IBM Zurich Research Laboratory. He received his Ph.D. degree in physics from the Swiss Federal Institute of Technology (ETH) Zurich in 1999. His research interests, primarily in condensed matter, include magnetic and electronic properties of transition metal oxides, photonic waveguides, and most recently, nonvolatile memory that is based on perovskites.

J. Georg Bednorz IBM Research Division, Zurich Research Laboratory, Säumerstrasse 4, 8803 Rüschlikon, Switzerland (bedzurich.ibm.com). Dr. Bednorz received his M.S. degree in crystallography from the University of Münster (Germany) in 1976 and his Ph.D. degree in natural sciences from the ETH Zürich in 1982. He joined the Zurich Research Laboratory in 1982 as a Research Staff Member. Since then, his research has focused on the physics and chemistry of perovskites and structurally related oxides with particular interest in structural phase transitions, ferroelectricity, and electrical transport. Dr. Bednorz was named IBM Fellow in 1987 and is co-recipient of the 1987 Nobel Prize in Physics for the discovery of high-temperature superconductivity in ceramic materials. His present research project on transition-metal-based oxides concentrates on the study of electrical transport phenomena and insulator metal transitions in connection with the nonvolatile memory phenomenon.

Charles T. Rettner IBM Research Division, Almaden Research Center, 650 Harry Road, San Jose, California 95120 (rettneralmaden.ibm.com). Dr. Rettner is a Research Staff Member at the IBM Almaden Research Center. He received his Ph.D. degree in chemistry from the University of Birmingham in 1978. After postdoctoral work at MIT and Stanford, he joined IBM in 1983. Until the early 1990s, his work mostly concerned the dynamics of chemical reactions, especially at surfaces. After working on a variety of problems relevant to magnetic recording, he has become increasingly involved with nanofabrication and electron-beam lithography. His current research interests include phase-change memory and nanomagnetic devices. He is author or coauthor of more than 170 journal articles and holds 15 patents.

Alejandro G. Schrott IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (schrottus.ibm.com). Dr. Schrott obtained a Ph.D. degree in physics from the University of Washington, Seattle, and spent 2 years in a postdoctoral position at the materials science department of Cornell University. He has been a Research Staff Member at the IBM T. J. Watson Research Center since 1986. He has worked on surface and interface properties of materials, in connection with a variety of processes. Dr. Schrott has also worked on processing and characterization of exploratory devices based on oxide and organic materials. Presently, his work focuses on process development and integration of phase-change memory devices and complex oxide memory.

Eric A. Joseph IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (ejosephus.ibm.com). Dr. Joseph is a Research Staff Member in the Silicon Technology Department at the IBM T. J. Watson Research Center. He received his B.S. and M.S. degrees in physics from the State University of New York at Albany in 1998 and 2000, respectively. In 2005, he received his Ph.D. degree in electrical engineering from the University of Texas at Dallas for his work on the characterization of plasma–surface interactions. He subsequently joined IBM, where he works in the plasma etch process development group focusing his research on the patterning of perovskite, chalcogenide, and ferromagnetic materials for nonvolatile memory applications. Dr. Joseph is the author or coauthor of multiple technical papers and patents and is a member of the IEEE and AVS Science and Technology Society.

Chung H. Lam IBM/Qimonda/Macronix PCRAM Joint Project, IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (clamus.ibm.com). In 1978, Dr. Lam received his B.Sc. degree in electrical engineering at Polytechnic University of New York and joined the IBM General Technology Division in Burlington as a memory circuit designer. In 1984, he was awarded the IBM Resident Study Fellowship and received his M.Sc. and Ph.D. degrees, both in electrical engineering, at Rensselaer Polytechnic Institute in 1987 and 1988, respectively. Upon returning from resident study at Rensselaer Polytechnic Institute, Dr. Lam assumed responsibilities in various disciplines of semiconductor research and development, including circuit and device design as well as process integration for memory and logic applications in the IBM Microelectronics Division. He has a strong interest in nonvolatile memory devices and, since 2001, has been a member of the Technical Committee of the IEEE Non-Volatile Memory Workshop. In 2003, he transferred to the IBM Research Division and in 2007 was named Distinguished Engineer. He has managed the Phase Change Memory Research Project at the T. J. Watson Research Center since 2003.

Markus Janousch Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland (markus.janouschpsi.ch). Dr. Janousch obtained his Ph.D. degree in physics from the University of Zurich in 1992. Before joining the Swiss Light Source (SLS) as a Staff Scientist in 1999, he worked in the field of particle physics at Yale University and the Eidgenössische Technische Hochschule Zürich. Currently, he is in charge of an x-ray microspectroscopy beamline at the SLS. His research activities include beamline instrumentation at synchrotrons and their application to condensed matter physics including perovskites and high-pressure studies.

Urs Staub Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland (urs.staubpsi.ch). Dr. Staub received his Ph.D. degree in physics from the Eidgenössische Technische Hochschule Zürich in 1993. After a postdoctoral fellowship of the Swiss National Science foundation at Argonne National Laboratory, he joined the Paul Scherrer Institut in 1995. Dr. Staub's research interests focus on condensed matter and include metal-insulator transitions, colossal magnetoresistance, multiferroics, and ordering phenomena, with an emphasis on using large facilities such as neutron and synchrotron sources.

Fabio La Mattina Physik-Institut der Universität Zürich, CH-8057 Zurich, and IBM Research Division, Zurich Research Laboratory, Säumerstrasse 4, 8803 Rüschlikon, Switzerland (ylmzurich.ibm.com). Mr. La Mattina is a doctoral student at the Physics Institute of the University of Zurich and employed at IBM Zurich Research Laboratory. His present research interests for his Ph.D. thesis concern the electric field effects on Cr-doped SrTiO₃ by means of electron-paramagnetic resonance, optical spectroscopy, and muon spin rotation spectroscopy.

Santos F. Alvarado IBM Research Division, Zurich Research Laboratory, Säumerstrasse 4, 8803 Rüschlikon, Switzerland (alvzurich.ibm.com). In 1977, Dr. Alvarado obtained his Ph.D. degree in physics from the Eidgenössische Technische Hochschule Zürich. His thesis topic deals with spin-polarized photoelectron spectroscopy on magnetic transition metal oxides. His present research interests include the study of resistive switching transition metal oxides by means of photoluminescence and electroluminescence spectroscopy, growth and characterization of epitaxial ferromagnetic thin films on III–V compounds for spintronics research, and STM-based electroluminescence and cathodoluminescence spectroscopy studies of nanowires and nanodots made of semiconducting materials.

Daniel Widmer IBM Research Division, Zurich Research Laboratory, Säumerstrasse 4, 8803 Rüschlikon, Switzerland (dwizurich.ibm.com). Mr. Widmer joined the IBM Zurich Research Laboratory in 1979. Over almost three decades, he has worked on diverse topics related to the physics of solids, from crystal and thin-film growth to electrical and structural characterization methods. He is also interested in all aspects of laboratory automation as well as in the design and implementation of the pulsed laser deposition setup.

Richard Stutz IBM Research Division, Zurich Research Laboratory, Säumerstrasse 4, 8803 Rüschlikon, Switzerland (riszurich.ibm.com). Mr. Stutz is a Senior Technical Specialist of the IBM Zurich Research Laboratory, which he joined in 1998. His current technical responsibilities and interests include electroplating, plasma sputter deposition, surface modification by stamping techniques, and focused ion beam machining for micromechanical devices. Before joining IBM, Mr. Stutz was responsible for the fabrication and technological aspects of holography and integrated and micro-optical systems while a member of the technical staff of the Paul Scherrer Institut and the Centre Suisse d'Electronique et de Microtechnique (CSEM) in Zurich, Switzerland.

Ute Drechsler IBM Research Division, Zurich Research Laboratory, Säumerstrasse 4, 8803 Rüschlikon, Switzerland (drezurich.ibm.com). Ms. Drechsler is a Processing Engineer in the Science and Technology Department of the IBM Zurich Research Laboratory. She originally joined the IBM semiconductor plant in Sindelfingen, Germany, in 1983, while also receiving training in chemical engineering. After this, she worked in the fabrication line for multilayer ceramic packaging, where she was promoted to Section Head in 1993. In 1996, Ms. Drechsler joined the Micro/Nanomechanics group at the IBM Zurich Research Laboratory, working on silicon micromachining and processing techniques. She is currently responsible for the organization and operation of the department cleanroom.

Daniele Caimi IBM Research Division, Zurich Research Laboratory, Säumerstrasse 4, 8803 Rüschlikon, Switzerland (caizurich.ibm.com). Mr. Caimi is a Senior Technical Specialist of the IBM Zurich Research Laboratory, which he joined in 2001. Until 2003, he had worked for the Photonic group in the fabrication of SiON optical waveguides. In 2004, Mr. Caimi joined the Advanced Functional Materials group, working on silicon and III/V gate stack materials and molecular beam epitaxy (MBE). His current technical responsibilities include the wafer preparation for the MBE deposition and the fabrication of CMOS test devices. Prior to joining IBM, Mr. Caimi was responsible for the technological aspects and fabrication of telecommunication relays at Axicom in Switzerland.