Geoffrey W. Burr IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (burralmaden.ibm.com). Dr. Burr received his B.S. degree in electrical engineering from the State University of New York at Buffalo in 1991 and his M.S. and Ph.D. degrees in electrical engineering from the California Institute of Technology in 1993 and 1996, respectively. Since that time, Dr. Burr has worked at the IBM Almaden Research Center, where he is currently a Research Staff Member. After having worked for a number of years as an experimentalist in volume holographic data storage and optical information processing, his current research interests include nanophotonics, numerical modeling for design optimization, phase-change memory, and other nonvolatile memory.

Bülent N. Kurdi IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (bulentus.ibm.com). Dr. Kurdi completed his Ph.D. studies at the Institute of Optics at the University of Rochester where he investigated silicon-based integrated optics. He holds B.S. degrees in electrical engineering and mathematics with minors in physics and philosophy from the University of Dayton. He joined the IBM Almaden Research Center in 1989 where he has worked on integrated optical devices for magneto-optical data storage, top surface imaging techniques for the fabrication of advanced magnetic write heads, and planarization processes for magnetic head slider fabrication. He is currently the manager of the nanoscale device integration group and has been coordinating several multifaceted efforts in the area of ultrahigh-density NVM devices.

J. Campbell Scott IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (jcscottalmaden.ibm.com). Dr. Scott is a Research Staff Member. He received a B.S. degree in physics from St. Andrews University, Scotland, and a Ph.D. degree in physics from the University of Pennsylvania. He has been a manager of R&D groups in electrophotographic materials, display materials and processes, organic electronics, and molecular electronics. Over the course of his research career, he has applied a wide variety of experimental techniques to the understanding of electronic, magnetic, and optical properties of primarily, but not exclusively, organic materials. He has experience in applying his knowledge of physics, materials science, chemistry, and processing to the technologies of electrophotographic printing, magnetic data storage, flat-panel displays, and memory devices. He has published more than 160 papers and holds 16 patents. He is a Fellow of the American Physical Society and a member of the Materials Research Society.

Chung H. Lam IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (clamus.ibm.com). Dr. Lam received a B.S. degree in electrical engineering from the Polytechnic University of New York. He joined IBM in 1978 as a memory circuit designer. In 1984 he was awarded the IBM Resident Study Fellowship and received M.S. and Ph.D. degrees, both in electrical engineering, from Rensselaer Polytechnic Institute. He then assumed responsibilities in various disciplines of semiconductor research and development, including circuit and device design and process integration for memory and logic applications. He has been a member of the Technical Committee of the IEEE Non-Volatile Memory Workshop since 2001. He was named an IBM Distinguished Engineer in 2007. He has managed the Phase Change Memory Research Project since 2003.

Kailash Gopalakrishnan IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (kailashus.ibm.com). Dr. Gopalakrishnan received a B.S. degree in electrical engineering from the Indian Institute of Technology and M.S. and Ph.D. degrees in electrical engineering from Stanford University. Since July 2004, Dr. Gopalakrishnan has been a Research Staff Member at the IBM Almaden Research Center. His main research interests are novel logic and memory devices, device modeling and simulation, and nanoimprint lithography.

Rohit S. Shenoy IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (rsshenoyus.ibm.com). Dr. Shenoy received a B.Tech. degree in engineering physics from the Indian Institute of Technology and M.S. and Ph.D. degrees in electrical engineering from Stanford University. Since 2005, he has been employed at the IBM Almaden Research Center as a Research Staff Member. His current research interests include novel devices and process technology for ultrahigh-density memory and CMOS logic.