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IBM Journal of Research and Development
Soft Errors in Circuits and Systems   Volume 52, Number 3, 2008
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New simulation methodology for effects of radiation in semiconductor chip structures - References

 by H. H. K. Tang,
C. E. Murray,
G. Fiorenza,
K. P. Rodbell,
M. S. Gordon,
and D. F. Heidel
References

  1. G. R. Srinivasan, H. K. Tang, and P. C. Murley, “Parameter-Free, Predictive Modeling of Single Event Upsets Due to Protons, Neutrons, and Pions in Terrestrial Cosmic Rays,” IEEE Trans. Nucl. Sci. 41, No. 6, 2063–2070 (1994).
  2. G. R. Srinivasan, P. C. Murley, and H. K. Tang, “Accurate, Predictive Modeling of Soft Error Rate Due to Cosmic Rays and Chip Alpha Radiation,” 32nd Annual Proceedings Reliability Physics, 1994, pp. 12–16.
  3. P. C. Murley and G. R. Srinivasan, “Soft-Error Monte Carlo Modeling Program, SEMM,” IBM J. Res. & Dev. 40, No. 1, 109–118 (1996).
  4. H. H. K. Tang, “Nuclear Physics of Cosmic Ray Interaction with Semiconductor Materials: Particle-Induced Soft Errors from a Physicist's Perspective,” IBM J. Res. & Dev. 40, No. 1, 91–108 (1996).
  5. H. H. K. Tang, G. R. Srinivasan, and N. Azziz, “Cascade-Statistical Model for Nucleon-Induced Reactions on Light Nuclei in the Energy Range 50 MeV–1 GeV,” Phys. Rev. C42, No. 4, 1598–1622 (1990).
  6. N. Azziz, H. H. K. Tang, and G. R. Srinivasan, “A Microscopic Model of Energy Deposition in Silicon Slabs Exposed to High-Energy Protons,” J. Appl. Phys. 62, No. 2, 414–416 (1987).
  7. H. H. K. Tang, “SEMM-2: A New Generation of Single-Event-Effect Modeling Tools,” IBM J. Res. & Dev. 52, No. 3, 233–244 (2008, this issue).
  8. H. H. K. Tang and E. H. Cannon, “SEMM-2: A Modeling System for Single Event Upset Analysis,” IEEE Trans. Nucl. Sci. 51, No. 6, 3342–3348 (2004).
  9. D. F. Heidel, K. P. Rodbell, P. Oldigies, M. S. Gordon, H. H. K. Tang, E. H. Cannon, and C. Plettner, “Single-Event Upset Critical Charge Measurements and Modeling of 65 nm Silicon-on-Insulator Latches and Memory Cells,” IEEE Trans. Nucl. Sci. 53, No. 6, 3512–3517 (2006).
  10. H. H. K. Tang, C. E. Murray, G. Fiorenza, K. P. Rodbell, and M. S. Gordon, “Importance of BEOL Modeling in Single Event Effect Analysis,” IEEE Trans. Nucl. Sci. 54, No. 6, 2162–2167 (2007).
  11. R. Baumann, “Impact of Single-Event Upsets in Deep-Submicron Silicon Technology,” MRS Bull. 28, 117–120 (2003).
  12. S. Gerardin, M. Bagatin, P. Rech, A. Cester, and A. Paccagnella, “Exploiting a Low-Energy Accelerator to Test Commercial Electronics with Low-LET Proton Beams,” Proc. RADECS, 2006.
  13. K. P. Rodbell, D. F. Heidel, H. H. K. Tang, M. S. Gordon, P. Oldiges, and C. E. Murray, “Low-Energy Proton-Induced Single-Event-Upsets in 65 nm Node, Silicon-on-Insulator, Latches and Memory Cells,” IEEE Trans. Nucl. Sci. 54, No. 6, 2474–2479 (2007).
  14. P. Sigmund, Springer Tracts in Modern Physics, Vol. 204, Stopping of Heavy Ions: A Theoretical Approach, Springer-Verlag, Heidelberg, Germany, 2004.
  15. R. G. Filippi, Jr., G. Fiorenza, X. H. Liu, C. E. Murray, G. A. Northrop, T. M. Shaw, R. A. Wachnik, and M. Y. Lanzerotti Wisniewski, “Method of Extracting Properties of Back End of Line (BEOL) Chip Architecture,” U.S. Patent No. 7,260,810, August 21, 2007.
  16. G. R. Satchler, Nuclear Direct Reactions, Oxford University Press, New York, 1982.
  17. J. F. Ziegler, Particle Interactions with Matter: SRIM—The Stopping and Range of Ions in Matter; see http://www.srim.org.
  18. W. H. Bragg and R. Kleeman, “On the Alpha Particles of Radium and Their Loss of Range in Passing through Various Atoms and Molecules,” Philos. Mag. 10, 318–340 (1905).


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