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JRD 40-1 (1996): Terrestrial Cosmic Rays and Soft Errors
IBM Research
IEEE Workshop on Silicon Errors in Logic - System Effects
Soft Errors in Circuits and Systems
Volume 52, Number 3, 2008
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Alpha-particle-induced upsets in advanced CMOS circuits and technology - References
by D. F.
Heidel
,
K. P.
Rodbell
,
E. H.
Cannon
,
C.
Cabral, Jr.
,
M. S.
Gordon
,
P.
Oldiges
,
and H. H. K.
Tang
References
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2007 Proceedings of the 45th Annual IEEE International Reliability Physics Symposium
, 2007, pp. 293–305.
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IEEE Trans. Nucl. Sci.
54
, No. 6, 2468–2473 (2007).
P. Roche and G. Gasiot, “Impacts of Front-End and Middle-End Process Modifications on Terrestrial Soft Error Rate,”
IEEE Trans. Device Mater. Reliability
5
, No. 3, 382–396 (2005).
D. F. Heidel, K. P. Rodbell, P. Oldiges, M. S. Gordon, H. H. K. Tang, E. H. Cannon, and C. Plettner, “Single-Event-Upset Critical Charge Measurements and Modeling of 65 nm Silicon-on-Insulator Latches and Memory Cells,”
IEEE Trans. Nucl. Sci.
53
, No. 6, 3512–3517 (2006).
A. KleinOsowski, P. Oldiges, R. Q. Williams, and P. M. Solomon, “Modeling Single-Event Upsets in 65-nm Silicon-on-Insulator Semiconductor Devices”,
IEEE Trans. Nucl. Sci.
53
, No. 6, 3321–3328 (2006).
A. KleinOsowski, E. H. Cannon, P. Oldiges, and L. Wissel,
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IBM J. Res. & Dev.
52
, No. 3, 255–263 (2008, this issue).
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-Particle Induced Electron-Hole Pair Generation in Silicon,”
IEEE Trans. Nucl. Sci.
47
, No. 6, 2575–2579 (2000).
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“Finite-Element Analysis of Semiconductor Devices: The FIELDAY Program,”
IBM J. Res. & Dev.
25
, No. 4, 218–231 (1981).
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IEEE Trans. Nucl. Sci.
51
, No. 6, 3342–3348 (2004).
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“Soft-Error Monte Carlo Modeling Program, SEMM,”
IBM J. Res. & Dev.
40
, No. 1, 109–118 (1996).
P. N. Sanda, J. W. Kellington, P. Kudva, R. Kalla, R. B. McBeth, J. Ackaret, R. Lockwood, J. Schumann, and C. R. Jones,
“Soft-Error Resilience of the IBM POWER6 Processor,”
IBM J. Res. & Dev.
52
, No. 3, 275–284 (2008, this issue).
C. Cabral, Jr., K. P. Rodbell, and M. S. Gordon, “Alpha Particle Mitigation Strategies to Reduce Chip Soft Error Upsets,”
J. Applied Phys.
101
, No. 1, 014902-1–014902-6 (2007).
K. P. Rodbell, D. F. Heidel, H. H. K. Tang, M. S. Gordon, P. Oldiges, and C. Murray, “Low-Energy Proton-Induced Single-Event-Upsets in 65 nm Node Silicon-on-Insulator Latches and Memory Cells,”
IEEE Trans. Nucl. Sci.
54
, No. 6, 2474–2479 (2007).
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