David F. Heidel IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (heidelus.ibm.com). Dr. Heidel received his B.S. degree in physics from Miami University in 1974, and his M.S. and Ph.D. degrees in physics from Ohio State University in 1976 and 1980, respectively. In 1980, he joined the IBM Research Division at the T. J. Watson Research Center in Yorktown Heights, New York, working on Josephson superconducting technology. Since 1984, he has been working on the design and testing of high-speed circuits, as well as radiation-induced soft errors in memory and logic circuits.

Kenneth P. Rodbell IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (rodbellus.ibm.com). Dr. Rodbell is a Manager of the Thin Film Metallurgy and Soft Error Rate (SER) Research Department. He joined IBM Research as a Research Staff Member in 1989 after spending 3 years at the IBM Semiconductor Development Laboratory in East Fishkill, New York. Dr. Rodbell received his B.S. (1982), M.S. (1983), and Ph.D. (1986) degrees in materials science and engineering, with a minor in statistics, from Rensselaer Polytechnic Institute. His research interests have focused on silicon-based electronic materials, specifically thin-film metallurgy, crystallographic texture, and electromigration. He began work on radiation-induced soft errors in semiconductor devices in 1999. He has coauthored more than 100 technical articles and has more than 50 U.S. patents. Dr. Rodbell was a recipient of the New York State 2006 Inventor of the Year Award for a Cu plating technology patent.

Ethan H. Cannon IBM Systems and Technology Group, 1000 River Street, Essex Junction, Vermont 05452 (cannon1us.ibm.com). Dr. Cannon received a B.S. degree in engineering physics from the University of California, Berkeley in 1994, and M.S. and Ph.D. degrees in physics from the University of Illinois at Urbana-Champaign in 1995 and 1999, respectively. After postdoctoral studies at the University of Notre Dame, he joined IBM in Essex Junction, Vermont. Currently, he is a reliability engineer focusing on soft-error simulations and measurements.

Cyril Cabral, Jr. IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (cabralus.ibm.com). Mr. Cabral is a Research Staff Member at the T. J. Watson Research Center in Yorktown Heights, New York. He received an M.S.E.E. degree from Polytechnic University in 1992 and a B.S.E.E. degree from Manhattan College in 1989. In 1988, he received a B.S. degree in physics/mathematics from Pace University. Mr. Cabral joined IBM in 1989 as an Engineer in the Thin Film Metallurgy and Interconnections Group in the Silicon Technology Department. Currently, he is in the Thin Film Metallurgy and Soft Error Rate Research Department. His main focus has been in the area of silicides used for contacts to CMOS devices, copper interconnects, diffusion barriers, gate metal materials, phase-change memory materials, intermetallic reactions, and development of silicon-based detectors for soft-error rate reduction. Mr. Cabral holds 92 U.S. patents and is first author of 18 publications and coauthor of more than 170 additional publications.

Michael S. Gordon IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (gordonmus.ibm.com). Dr. Gordon is a Research Staff Member at the T. J. Watson Research Center. He joined IBM in 1987 and spent 15 years working in the IBM Semiconductor Research Development Laboratory in East Fishkill, New York, in the field of electron beam lithography before joining the Research Laboratory. He received his B.S. degree in 1982 in engineering physics from the University of Colorado, Boulder, and his Ph.D. degree in 1989 in experimental nuclear physics from the State University of New York at Stony Brook. Dr. Gordon's research interests are focused on applications of accelerator-based ions including materials analysis and single-event upsets in semiconductors. He has 24 patents issued and 9 patents pending or in process, and he has 10 inventions published in the IBM Technical Disclosure Bulletin. Dr. Gordon has coauthored more than 40 technical articles. In 2007, he received an IBM Outstanding Technical Achievement Award.

Phil Oldiges IBM Semiconductor Research and Development Center, Systems and Technology Group, Hopewell Junction, New York 12533 (poldigesus.ibm.com). Dr. Oldiges received a B.S. degree in physics from Thomas More College in 1981, and M.S. and Ph.D. degrees in electrical engineering from Cornell University in 1984 and 1988, respectively. From 1984 to 1986, he was a Visiting Research Scientist at Toshiba Corporation in Kawasaki, Japan, investigating the dynamics of alpha-particle-induced charge collection in dynamic memories. From 1988 to 1993, he worked at Sony Corporation, Atsugi, Japan, developing physical models for device simulation. From 1993 to 1998, he worked in the TCAD Group at Digital Equipment Corporation in Hudson, Massachusetts, developing models for front-end process simulation and tools for soft-error evaluation of SRAM and logic. Currently, he is Manager of the Research TCAD Group with the IBM Systems and Technology Group in Hopewell Junction, New York, and is responsible for front-end process and device models for the 32-nm technology node and beyond. He is a member of the IEEE, Tau Beta Pi, and Sigma Pi Sigma.

Henry H. K. Tang IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (hktangus.ibm.com). Dr. Tang is a Senior Engineer at the IBM T. J. Watson Research Center. He received his B.A. degree from Kalamazoo College in 1974 (magna cum laude, honors in physics and mathematics, Phi Beta Kappa). He received his Ph.D. degree in 1979 (theoretical physics) from Yale University, where he was a Heyl Predoctoral Fellow. He was a member of the research staff at the Massachusetts Institute of Technology, the Niels Bohr Institute at the University of Copenhagen, and the Cyclotron Institute at the Texas A&M University. In 1986, Dr. Tang joined IBM at East Fishkill to work on the company's first modeling toolset for particle-induced soft-error analysis. Other areas he has worked on include the modeling of advanced devices and NVRAM (nonvolatile RAM) technology. In 2001, he joined his present group at Yorktown Heights to focus on new radiation-related technology issues, and to develop a new generation of single-event-effect models and design tools. Dr. Tang has authored and coauthored more than 40 research papers, and he has mentored a number of experimental nuclear physics programs. In 2007, he was awarded an Invention Achievement Award and an Outstanding Technical Achievement Award.