Michael S. Gordon IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (gordonmus.ibm.com). Dr. Gordon is a Research Staff Member at the T. J. Watson Research Center. He joined IBM in 1987 and spent 15 years working in the IBM Semiconductor Research Development Laboratory in East Fishkill, New York, in the field of electron beam lithography before joining the Research Laboratory. He received his B.S. degree in 1982 in engineering physics from the University of Colorado, Boulder, and his Ph.D. degree in 1989 in experimental nuclear physics from the State University of New York at Stony Brook. Dr. Gordon's research interests are focused on applications of accelerator-based ions including materials analysis and single-event upsets in semiconductors. He has 24 patents issued and 9 patents pending or in process, and he has 10 inventions published in the IBM Technical Disclosure Bulletin. Dr. Gordon has coauthored more than 40 technical articles. In 2007, he received an IBM Outstanding Technical Achievement Award.

Kenneth P. Rodbell IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (rodbellus.ibm.com). Dr. Rodbell is a Manager of the Thin Film Metallurgy and Soft Error Rate (SER) Research Department. He joined IBM Research as a Research Staff Member in 1989 after spending 3 years at the IBM Semiconductor Development Laboratory in East Fishkill, New York. Dr. Rodbell received his B.S. (1982), M.S. (1983), and Ph.D. (1986) degrees in materials science and engineering, with a minor in statistics, from Rensselaer Polytechnic Institute. His research interests have focused on silicon-based electronic materials, specifically thin-film metallurgy, crystallographic texture, and electromigration. He began work on radiation-induced soft errors in semiconductor devices in 1999. He has coauthored more than 100 technical articles and has more than 50 U.S. patents. Dr. Rodbell was a recipient of the New York State 2006 Inventor of the Year Award for a Cu plating technology patent.

David F. Heidel IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (heidelus.ibm.com). Dr. Heidel received his B.S. degree in physics from Miami University in 1974, and his M.S. and Ph.D. degrees in physics from Ohio State University in 1976 and 1980, respectively. In 1980, he joined the IBM Research Division at the T. J. Watson Research Center in Yorktown Heights, New York, working on Josephson superconducting technology. Since 1984, he has been working on the design and testing of high-speed circuits, as well as radiation-induced soft errors in memory and logic circuits.

Cyril Cabral, Jr. IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (cabralus.ibm.com). Mr. Cabral is a Research Staff Member at the T. J. Watson Research Center in Yorktown Heights, New York. He received an M.S.E.E. degree from Polytechnic University in 1992 and a B.S.E.E. degree from Manhattan College in 1989. In 1988, he received a B.S. degree in physics/mathematics from Pace University. Mr. Cabral joined IBM in 1989 as an Engineer in the Thin Film Metallurgy and Interconnections Group in the Silicon Technology Department. Currently, he is in the Thin Film Metallurgy and Soft Error Rate Research Department. His main focus has been in the area of silicides used for contacts to CMOS devices, copper interconnects, diffusion barriers, gate metal materials, phase-change memory materials, intermetallic reactions, and development of silicon-based detectors for soft-error rate reduction. Mr. Cabral holds 92 U.S. patents and is first author of 18 publications and coauthor of more than 170 additional publications.

Ethan H. Cannon IBM Systems and Technology Group, 1000 River Street, Essex Junction, Vermont 05452 (cannon1us.ibm.com). Dr. Cannon received a B.S. degree in engineering physics from the University of California, Berkeley in 1994, and M.S. and Ph.D. degrees in physics from the University of Illinois at Urbana–Champaign in 1995 and 1999, respectively. After postdoctoral studies at the University of Notre Dame, he joined IBM in Essex Junction, Vermont. Currently, he is a reliability engineer focusing on soft-error simulations and measurements.

Daniel D. Reinhardt IBM Systems and Technology Group, 1000 River Street, Essex Junction, Vermont 05452 (ddreinhaus.ibm.com). Mr. Reinhardt received a B.S. degree in electrical engineering from Purdue University (1992) and an M.S. degree in electrical engineering from National Technological University (1997). He joined the IBM Microelectronics Division in 1992 as a memory product reliability engineer working on the qualification of DRAMs. Today, Mr. Reinhardt continues to work as a Senior Engineer on product reliability and qualifications for IBM PowerPC* processors, the Cell Broadband Engine** processor, and product-level soft-error-rate issues.

*Trademark, service mark, or registered trademark of International Business Machines Corporation in the United States, other countries, or both.
**Trademark, service mark, or registered trademark of E. I. du Pont de Nemours and Company or Sony Computer Entertainment, Inc., in the United States, other countries, or both.