Biographical sketches of authors

Carlton M. Osburn   Department of Electrical and Computer Engineering, North Carolina State University, P.O. Box 7911, Raleigh, North Carolina 27695 (osburn@eos.ncsu.edu). Dr. Osburn is Director of the Center for Advanced Electronic Materials Processing and a Professor in the Electrical and Computer Engineering Department. He received his B.S., M.S., and Ph.D. degrees from Purdue University in 1966, 1967, and 1970, respectively. Dr. Osburn subsequently joined IBM at the Thomas J. Watson Research Center, where he spent 13 years working on gate dielectric integrity, silicided junctions, and process integration. In 1983 he joined North Carolina State University, where he spent ten years as Director of Advanced Semiconductor Technology at the Microelectronics Center of North Carolina. Dr. Osburn has published more than 130 technical papers on silicon technology. He is a Fellow of the Institute of Electrical and Electronics Engineers and of the Electrochemical Society, of which he is past president.

Indong Kim   Department of Electrical and Computer Engineering, North Carolina State University, P.O. Box 7911, Raleigh, North Carolina 27695 (ikim2@unity.ncsu.edu). Mr. Kim received a B.S. degree in electronic materials engineering from Kwangwoon University, Seoul, Korea, in 1999. He subsequently joined the Department of Electrical and Computer Engineering at North Carolina State University, pursuing the Ph.D. degree. He is currently with the SRC/SEMATECH Front End Process Research Center at NCSU, working on alternative gate stack devices under the direction of Prof. C. M. Osburn.

Sungkee Han   Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (shan2@eos.ncsu.edu). Mr. Han received a B.S. degree in materials engineering from Rensselaer Polytechnic Institute in 1995 and an M.S. degree in materials science and engineering from North Carolina State University in 1998. He is currently pursuing a Ph.D. degree in materials science and engineering.

Indranil De   KLA-Tencor Electrical Methods Division, 1 Technology Drive, Milpitas, California. Dr. De received his B.Tech. degree from IIT-Kanpur, India, in 1994, and his M.S. degree from Duke University in 1996, both in electrical engineering. He completed his Ph.D. in 2000 from North Carolina State University, where his work focused on front-end process integration and transistor design. In 2000 he joined PDF Solutions and worked on integration and transistor design for a 0.13-µm technology. His current interests at KLA Tencor are early in-line defect detection, lithography and CMP systematics, and parametric yield enhancement. Dr. De has authored or co-authored six technical publications.

Kam F. Yee   Access Network Division, Acterna, 20400 Observation Drive, Germantown, Maryland 20876 (kam_yee@ieee.org). Dr. Yee is a design engineer working on optoelectronics applications for testing of high-speed electrical and optical telecommunications networks. He received two B.S. degrees, in electrical engineering and computer engineering, in 1990, and M.S. and Ph.D. degrees in electrical engineering in 1992 and 2000, respectively, all from North Carolina State University. He is an author or co-author of five conference papers focused on nanometer MOSFET technology scaling, alternative gate-stack dielectrics, and channel engineering. Dr. Yee is a member of the Institute of Electrical and Electronics Engineers.

Shyam Gannavaram   Intel Corporation, Hillsboro, Oregon 97123. Dr. Gannavaram received the B.Tech. degree from the Indian Institute of Technology, Bombay, in 1995, the M.S. degree from Vanderbilt University in 1997 in materials science and engineering, and the Ph.D. degree from North Carolina State University in electrical engineering under the direction of Dr. M. C. Öztürk. His Ph.D. thesis research was on ultrashallow junction and contact alternatives for sub-100-nm CMOS. After graduation, Dr. Gannavaram joined Intel as a member of the technical staff.

SungJoo Lee   Department of Electrical and Computer Engineering, University of Texas at Austin, 10100 Burnet Road, Austin, Texas 78758. Mr. Lee is a Ph.D. student working under the guidance of Prof. Dim-Lee Kwong.

Chung-Ho Lee   Department of Electrical and Computer Engineering, University of Texas at Austin, 10100 Burnet Road, Austin, Texas 78758. Mr. Lee is a Ph.D. student working under the guidance of Prof. Dim-Lee Kwong.

Zhijiong J. Luo   Department of Electrical Engineering, Yale University, P.O. Box 206264, New Haven, Connecticut 06520. Mr. Luo received the B.S. degree in applied physics from the University of Science and Technology of China in 1996, and the M.S. degree in physics from the University of North Carolina in 1998. He is currently pursuing the Ph.D. degree in electrical engineering at Yale University. Mr. Luo's research interests include gate dielectric scaling issues and the development of advanced gate dielectric for deep-submicron MOS devices.

Wenjuan Zhu   Department of Electrical Engineering, Yale University, P.O. Box 206264, New Haven, Connecticut 06520 (wenjuan.zhu@yale.edu). Ms. Zhu is a Ph.D. student at Yale University. She received a B.S. degree and an M.S. degree in optoelectrics from Shandong University in China in 1995 and 1998, respectively. In 1999, she received another M.S. degree in electrical engineering from Yale University.

John R. Hauser   Department of Electrical and Computer Engineering, North Carolina State University, P.O. Box 7911, Raleigh, North Carolina 27695 (hauser@eos.ncsu.edu). Dr. Hauser is a faculty member in the Department of Electrical and Computer Engineering at North Carolina State University, where he currently serves as Interim Department Head. He received a B.S. degree in electrical engineering from North Carolina State University in 1960 and received M.S. and Ph.D. degrees from Duke University in 1962 and 1964, respectively. In 1960 and 1961 Dr. Hauser was employed by Bell Laboratories in Winston-Salem, North Carolina. In 1962 he joined the Research Triangle Institute, where he did research work on semiconductor and microelectronic devices. In 1966 he joined the faculty at North Carolina State University. Dr. Hauser has published more than 150 technical papers in the area of microelectronic materials and devices. He has served as Director of the Advanced Electronic Materials Processing Center and the SRC/SEMATECH Front End Process Research Center at North Carolina State University. His current research interests are in the areas of microelectronics and semiconductor devices. He is a member of the American Physical Society and a Fellow of the IEEE.

Dim-Lee Kwong   Department of Electrical and Computer Engineering, University of Texas at Austin, 10100 Burnet Road, Austin, Texas 78758 (dlkwong@mail.utexas.edu). Dr. Kwong received his B.S. degree in physics and his M.S. degree in nuclear engineering, both from the National Tsing Hua University, Taiwan, in 1977 and 1979, respectively. In 1982 he received the Ph.D. degree in electrical engineering from Rice University and received the Best Dissertation Award. He was an Assistant Professor of Electrical Engineering at the University of Notre Dame during the years from 1982 to 1985. He was a Visiting Scientist at the IBM General Technology Division facility in Essex Junction, Vermont, during the summer of 1985, working on 4Mb DRAM technology. He subsequently joined the University of Texas at Austin in the Microelectronics Research Center and Department of Electrical and Computer Engineering, where he is a Full Professor. Dr. Kwong has received numerous awards, including the IBM Faculty Development Award in 1984 and the Engineering Foundation Teaching Award from the University of Texas at Austin in 1994. He holds the Earl N. and Margaret Brasfield Endowed Fellowship, is the author of more than 450 referred archival publications, and has been awarded more than 20 U.S. patents. His current areas of research interest include rapid thermal CVD technology for the growth and deposition of semiconductor materials compatible with ULSI processes, high-k dielectrics for logic, analog, and memory devices, metal gate electrode, shallow junctions, and nanoelectronics. Under his supervision, 35 students have received their Ph.D. degrees.

Gerald Lucovsky   Department of Physics, North Carolina State University, Raleigh, North Carolina 27695 (gerry_lucovsky@ncsu.edu). Dr. Lucovsky has been a University Professor of Physics at North Carolina State University since 1980. Prior to that he was a Senior Research Specialist at Philco Corporation in Blue Bell, Pennsylvania (1958–1965), a Branch Manager in the Xerox Corporation Webster Research Center in Webster, New York (1965–1970), and a Senior Research Fellow and Laboratory Manager in the Xerox Palo Alto Research Center in Palo Alto, California (1970–1979). He received the B.S. and M.A. degrees in physics in 1956 and 1958, respectively, from the University of Rochester, New York, and the Ph.D. degree in physics in 1960 from Temple University. Dr. Lucovsky is a Fellow of the American Physical Society (1976) and the American Vacuum Society (1995).

T. P. Ma   Department of Electrical Engineering, Yale University, P.O. Box 206264, New Haven, Connecticut 06520 (T.Ma@yale.edu). Dr. Ma is a Professor of Electrical Engineering and of Applied Physics at Yale University, where he has been a faculty member since 1977. Prior to that, he had been with IBM after graduation from Yale University with a Ph.D. degree in 1974. He did research work at IBM on advanced silicon device technology and ionizing radiation effects in MOS devices. Dr. Ma has served on many committees at Yale University, was Acting Chairman of the Electrical Engineering Department in 1988 and Chairman during the period from July 1991 to June 1995, and is again serving as Chairman for another three-year term. His research and teaching at Yale have focused on semiconductors, MOS interface physics, ionizing radiation and hot-electron effects, advanced gate dielectrics, flash memory device physics, and ferroelectric thin films for memory applications. He is a patent holder and co-editor of a book, and has given numerous invited talks and contributed to several book chapters as well as more than 180 research papers. Dr. Ma is a Fellow of the IEEE, a Member of the Connecticut Academy of Science and Engineering (CASE), a life member of the APS, and a member of the ECS, MRS, Sigma Xi, and the Yale Science and Engineering Association (YSEA).

Mehmet C. Öztürk   Department of Electrical and Computer Engineering, North Carolina State University, P.O. Box 7911, Raleigh, North Carolina 27695 (mco@eos.ncsu.edu). Dr. Öztürk received his B.S. degree from Bosphorus University, Istanbul, in 1980, his M.S. degree from Michigan Technological University, and his Ph.D. degree from North Carolina State University, all in electrical engineering. After graduation, he joined North Carolina State University, where he is currently serving as a Professor of Electrical and Computer Engineering. Dr. Öztürk's research focuses on advanced process development for nanoscale MOSFETs, with emphasis on chemical vapor deposition.