Biographical sketch of author

Tak H. Ning   IBM Research Division, Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (ningth@us.ibm.com). Dr. Ning received his Ph.D. degree in physics from the University of Illinois at Urbana–Champaign in 1971. He joined the IBM Thomas J. Watson Research Center at Yorktown Heights, New York, in 1973. Since 1991, he has been an IBM Fellow. He has made contributions to various areas of silicon devices and technology, including bipolar, CMOS, DRAM, SOI, EEPROM, and hot-electron effects. Dr. Ning has received numerous awards, including the 1991 IEEE Jack A. Morton Award and the 1989 IEEE Electron Devices Society J. J. Ebers Award. He is a member of the National Academy of Engineering and a Fellow of the IEEE and of the American Physical Society.