Biographical sketches of authors

Anthony Lochtefeld   Amberwave Systems Corporation, 13 Garabedian Drive, Salem, New Hampshire 03079 (alochtefeld@amberwave.com). Dr. Lochtefeld received the B.S.E.E. degree from Ohio Northern University (1990) and the M.S.E.E. degree from Purdue University (1996) while investigating optical and electrical properties of nonstoichiometric gallium arsenide. He received the Ph.D. degree in electrical engineering from the Massachusetts Institute of Technology (2001), exploring carrier transport in deep-sub-100-nm MOSFETs as well as process integration issues for alternative MOSFET architectures. Dr. Lochtefeld is currently involved in technology development for CMOS in Si/SiGe heterosystems at AmberWave Systems Corporation in Salem, New Hampshire.

Ihsan J. Djomehri Microsystems Technology Laboratory, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139. Mr. Djomehri received the B.S. degree in electrical engineering and computer science and the A.B. degree in physics from the University of California at Berkeley in 1997. At the Massachusetts Institute of Technology in 1998, he received the S.M. degree while developing a novel nanofabrication technology. He is currently pursuing his Ph.D. degree in electrical engineering and conducting research with Professor Antoniadis on inverse modeling of sub-100-nm MOSFETs, sponsored by the SRC. Mr. Djomehri's professional interests include device technology and computational physics.

Ganesh Samudra   Microsystems Technology Laboratory, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139. Dr. Samudra received his M.Sc. degree from the Indian Institute of Technology, Mumbai, and his M.S., M.S.E.E., and Ph.D. degrees from Purdue University. From 1986 to 1989, he worked for Texas Instruments, where he was elected Member, Group Technical Staff, for outstanding technical contributions in process and device simulation. Dr. Samudra is an Associate Professor on leave from the Department of Electrical and Computer Engineering at the National University of Singapore and, currently, a Visiting Professor at MIT. He has published about fifty articles in international journals and conferences. His research interests involve the development and application of technology CAD.

Dimitri A. Antoniadis   Microsystems Technology Laboratory, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139 (antoniadis@mtl.mit.edu). Dr. Antoniadis received his B.S. degree in physics from the National University of Athens in 1970, his M.S.E.E. in 1973, and his Ph.D. in electrical engineering in 1976 from Stanford University. From 1969 to 1976, he conducted research in the area of measurement and modeling of the earth's ionosphere and thermosphere. Starting with the development in 1976 of the now industry-standard SUPREM process simulator, his technical activity has been in the area of semiconductor devices and integrated circuit technology. Dr. Antoniadis has worked on the physics of diffusion in silicon, thin-film technology and devices, and quantum-effect semiconductor devices. His current research focuses on the physics and technology of extreme-submicron Si and Si/SiGe MOSFETs; silicon-on-insulator (SOI) devices and technology for sub-100-nm CMOS; advanced device and interconnect technology (e.g., 3D integration) for high-performance CMOS; and technology CAD and applications for advanced device design. He has authored or co-authored approximately 200 technical articles. He has received the Solid State Science and Technology Young Author Award of the Electrochemical Society in 1979, and the Paul Rappaport Award of the IEEE in 1998. From 1970 to 1971, Dr. Antoniadis was a Fellow of the National Research Institute, Athens. From 1976 to 1978, he was a Research Associate in the Department of Electrical Engineering at Stanford University. In 1978, he joined the faculty at MIT, where he is the Ray and Maria Stata chaired Professor of Electrical Engineering. From 1984 to 1990, he was the founding Director of the MIT Microsystems Technology Laboratories. Currently he is Director of the multi-university Focus Research Center for Materials Structures and Devices. Dr. Antoniadis has been a Fellow of the IEEE since 1986.