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by M. E. Law |
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References
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A. D. Lilak, M. E. Law, K. S. Jones, M. D. Giles, E. Andideh, M.-J. Curturla, T. D. d. l. Rubia, J. Zhu, and S. Theiss, Predictive Simulation of Transient Activation Processes in Boron-Doped Silicon Structures, IEDM Tech. Digest, pp. 493496 (1998).
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A. D. Lilak, M. E. Law, K. S. Jones, M. D. Giles, and S. K. Earles, A Physics Based Modeling Approach for the Simulation of Anomalous Boron Diffusion and Clustering Behaviours, IEDM Tech. Digest, pp. 493496 (1997).
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D. F. Downey, C. M. Osburn, J. J. Cummings, S. Daryanani, and S. W. Falk, Dose Rate Effects on the Formation of Ultra-Shallow Junctions with Low Energy B+ and BF2+ Ion Implants, Thin Solid Films 308, 562569 (1997).
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L. S. Robertson, K. S. Jones, A. Lilak, M. E. Law, P. S. Kringhoj, L. M. Rubin, J. Jackson, D. S. Simons, and P. Chi, The Effect of Dose Rate on Interstitial Release from the End of Range Implant Damage Region in Silicon, Appl. Phys. Lett. 71, 31053107 (1997).
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S. Tian, S.-H. Yang, S. Morris, K. Parab, A. F. Tasch, D. Kamenitsa, R. Reece, B. Freer, R. B. Simonton, and C. Magee, The Effect of Dose Rate on Ion Implanted Impurity Profiles in Silicon, Nucl. Instr. Meth. Phys. Res. 112, 144147 (1996).
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M.-J. Caturla, T. Diaz de la Rubia, L. A. Marques, and G. H. Gilmer, Ion Beam Processing of Silicon at keV Energies: A Molecular Dynamics Study, Phys. Rev. B 54, 1668316695 (1996).
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L. S. Robertson, Diffusion of Ion Implanted Boron in Silicon: The Effects of Lattice Defects and Co-Implanted Impurities, Materials Science, University of Florida Press, Gainesville, 2001.
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S. Luning, P. M. Rousseau, P. B. Griffin, P. G. Carey, and J. D. Plummer, Kinetics of High Concentration Arsenic Deactivation at Moderate to Low Temperatures, IEEE Trans. Electron Devices 17, 457460 (1992).
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D. Bobili, S. Solmi, A. Parisini, M. Derdour, A. Armigliato, and L. Moro, Precipitation, Aggregation, and Diffusion in Heavily Arsenic-Doped Silicon, Phys. Rev. B 49, 24772483 (1994).
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H.-H. Vuong, C. S. Rafferty, S. A. Eshraghi, J. L. Lentz, P. M. Zeitzoff, M. R. Pinto, and S. J. Hillenius, Effects of Oxide Interface Traps and Transient Enhanced Diffusion on the Process Modeling of PMOS Devices, IEEE Trans. Electron Devices 43, 11441151 (1996).
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R. Raman, M. E. Law, V. Krishnamoorthy, K. S. Jones, and S. B. Herner, Effect of Surface Proximity on End-of-Range Loop Dissolution in Silicon, Appl. Phys. Lett. 74, 15911593 (1999).
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M. J. van Dort, W. van der Wel, J. W. Slotboom, N. E. B. Cowern, M. P. G. Knuvers, H. Lifka, and P. C. Zalm, Two-Dimensional Transient Enhanced Diffusion and Its Impact on Bipolar Transistors, presented at the International Electron Devices Meeting, San Francisco, 1994.
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L. Adam, M. E. Law, O. Dokumaci, and S. Hegde, A Physical Model for Implanted Nitrogen Diffusion and Its Effect on Oxide Growth, presented at the International Electron Devices Meeting, San Francisco, 2000.
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