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Author bios
James F. Ziegler
IBM Research Division, Thomas J. Watson Research Center, P.O. Box
218, Yorktown Heights, New York 10598 (ZIEGLER at YKTVMV, ziegler@watson.ibm.com). After receiving B.S., M.S., and
Ph.D. degrees from Yale, Dr. Ziegler joined IBM in 1967 at the
Thomas J. Watson Research Center, where he now manages the Material
Analysis and Radiation Effects group. Most of his research concerns the
interaction of radiation with matter. Dr. Ziegler is the author of
more than 130 publications and 14 books; he holds 11 U.S. patents. He
received IBM Corporate Awards in 1981 and 1990. Dr. Ziegler is a
Fellow of the American Physical Society and of the IEEE. He has been
awarded the von Humboldt Senior Scientist Prize by the German
government.
Huntington W. Curtis
IBM Research Division, Thomas J. Watson Research Center, P.O. Box
218, Yorktown Heights, New York 10598 (CURTIS at YKTVMV, curtis@watson.ibm.com). Dr. Curtis received a B.S. in
chemistry and physics from the College of William and Mary in 1942,
an M.S. in physics and electrical engineering from the University of
New Hampshire in 1948, and a Ph.D. in electrical engineering from the
State University of Iowa in 1950. Prior to joining IBM, he was a
professor of electrical engineering at Dartmouth College. Dr. Curtis
joined IBM in 1959, becoming a senior engineer in 1960. After serving
as Manager of Technical Requirements at FSD headquarters, he was
promoted to technical advisor to the IBM Vice President for Research
and Engineering, followed by assignments on the IBM Corporate
engineering staff as director of government technical liaison and as
director of scientific and technical information. He held subsequent
positions as engineering consultant for IBM Biomedical Systems and
engineering consultant for Manufacturing Research. Dr. Curtis retired
from IBM in 1993 and is now an Emeritus Scientist at the IBM Thomas J.
Watson Research Laboratory. He is a member of Phi Beta Kappa, Tau Beta
Pi, and Sigma Xi, a senior member of the Institute of Electrical and
Electronics Engineers, and a trustee of the Mount Washington
Observatory.
Hans P. Muhlfeld
IBM Microelectronics Division, East Fishkill facility, Route 52,
Hopewell Junction, New York 12533 (MUHLFELD at FSHVMFK1). Mr.
Muhlfeld is an advisory engineer in Reliability Services at the IBM
East Fishkill facility. He joined the Military Products Division of IBM
in 1957 at Kingston, New York. After two years at a SAGE installation
at McCord AFB, Tacoma, Washington, he joined the memory development
area of SMD in Poughkeepsie, New York, where he was involved in memory
testing and memory tester design. In 1986 he joined Reliability
Services in East Fishkill, designing test equipment and testing for
soft fails in memory chips.
Charles J. Montrose
IBM Microelectronics Division, East Fishkill facility, Route 52,
Hopewell Junction, New York 12533 (MONTROSE at FSHVMFK1). Mr.
Montrose is an advisory engineer in the Reliability Services Department
at the East Fishkill facility. His responsibilities include test system
design, system control software, and data acquisition. He joined IBM in
1982, after receiving a B.S. degree in electrical engineering from the
New Jersey Institute of Technology. Mr. Montrose was initially involved
in the design of a custom high-speed driver/receiver chip for a
high-performance test system.
Michael Nicewicz
IBM Microelectronics Division, Burlington facility, Essex Junction,
Vermont 05452 (NICEWICM at BTVLABVMV, mnicewicz@vnet.ibm.com).
Mr. Nicewicz received a B.S.E.E. degree from the
Polytechnic Institute of New York in 1984 and an M.S.E.E. from
Syracuse University in 1990. He joined the IBM General Technology
Division in East Fishkill, New York, in 1984 to work on high-end memory
chip design. Mr. Nicewicz holds two patents; for the last
several years he has worked at the Burlington facility on future
PowerPC* microprocessor designs.
Wen Y. Wang
IBM Systems Technology and Architecture Division, 11400 Burnet Road,
Austin, Texas 78758 (WWANG at AUSVM6). Dr. Wang received his B.S.
degree in electrical engineering from the National Taiwan University,
his M.S. degree in physics from the University of Cincinnati, and the
Ph.D. degree in electrical engineering from the University of
Michigan. He joined the IBM System Communications Division at Kingston,
New York in 1975. During the succeeding 19 years he worked on a variety
of assignments in bipolar and CMOS logic and array circuit development
at different facilities in IBM. In 1994 he transferred to Austin to
work on array circuit design for portable PowerPC development. Dr. Wang
holds several patents on computer logic and array circuits.
Leo B. Freeman
IBM Microelectronics Division, East Fishkill facility, Route 52,
Hopewell Junction, New York 12533. Dr. Freeman, currently retired,
was a senior engineer in the Cache Design Department at the East
Fishkill facility. He joined the IBM Components Division at East
Fishkill in 1969, and worked on array and logic chip design for
mainframe computers. Dr. Freeman received a B.S. in electrical
engineering and a B.S. in engineering physics from Lehigh University in
1963 and 1964, respectively. In 1965, he received an M.S. in
electronics from Stanford University. He received his Ph.D. in
electrical engineering from Lehigh University in 1969. Dr. Freeman
retired from IBM in 1993.
James L. Walsh
IBM Microelectronics Division, East Fishkill facility, Route 52,
Hopewell Junction, New York 12533. Mr. Walsh, who joined IBM in
1952, has had various assignments in advanced technology and product
areas. He managed the cosmic ray soft-error program at the East
Fishkill site and was involved with experimental testing and modeling
of chips, as well as coordinating efforts on soft errors between IBM
divisions. He received a B.S. in electrical engineering from the
University of Rhode Island in 1949, and an M.A. in physics from Hofstra
University in 1952. Mr. Walsh is an IBM Fellow; in 1990 he retired from
IBM.
José M. Orro
IBM Personal Computer Company, P.O. Box 12195, Research Triangle
Park, North Carolina 27709 (ORROJ at RALVMMV, J_ORRO@vnet.ibm.com). Mr. Orro is a worldwide product engineer
for nonvolatile memory and PLD at the IBM Personal Computer Company. He
received a B.S. degree in electrical engineering from the City College
of New York, and joined IBM in 1982 at the Poughkeepsie facility as a
reliability engineer on vendor memories. In 1989, he joined the
reliability department of the Corporate Component Procurement
group, where he investigated soft errors on vendor memory products. Mr.
Orro has received several informal awards for his work on hardware
development for memory reliability stress and soft-error testing.
John M. Ross
IBM Microelectronics Division, East Fishkill facility, Route 52,
Hopewell Junction, New York 12533 (JMROSS at FSHVMFKMV, jmross@vnet.ibm.com). Mr. Ross is an electrical engineer in the
Storage Subsystems and Interface Products Department of the IBM
Microelectronics Division. He received a B.S. degree in electrical
engineering from Virginia Polytechnic Institute and State University in
1989, and an M.S. degree in electrical engineering from Columbia
University in 1993. Mr. Ross joined IBM in 1989 at the East Fishkill
facility, where he became involved in the study of soft errors in
computer memories. He is currently working on the design of
high-performance multibyte interface circuits.
Timothy J. O'Gorman
IBM Microelectronics Division, Burlington facility, Essex Junction,
Vermont 05452 (OGORMAN at BTVLABVMV, ogorman@vnt.ibm.com).
Mr. O'Gorman received the B.S. degree in physics from
Manhattan College, Bronx, New York, in 1976, and the M.S. degree in
physics from Pennsylvania State University, State College,
Pennsylvania, in 1978. He joined the IBM General Technology
Division in Burlington, Vermont, in 1981. Since then he has
worked in semiconductor reliability engineering. Mr. O'Gorman's main
interests have been in radiation-induced soft errors in memory chips.
He is currently working on reliability modeling of CMOS circuits.
Timothy D. Sullivan
IBM Microelectronics Division, Burlington facility, Essex Junction,
Vermont 05452 (TSULLIV at BTVLABVMV, tsulliv@btvlabvm.vnet.ibm.com). Dr. Sullivan is an advisory
scientist in Technology Reliability Engineering at the IBM Burlington
facility. Since he joined IBM in 1984, his responsibilities have
included qualification of new technologies, and measurement and
modeling of chip failure mechanisms, including radiation-induced soft
errors, stress-induced interconnect voiding, and electromigration. Dr. Sullivan
received a B.A. degree in physics in 1971 from Northeastern University,
and M.S. and Ph.D. degrees in materials science in 1982 and 1985,
respectively, from Cornell University. He is a member of the Materials
Research Society.
Thomas A. Enger
IBM System/390 Division, 522 South Road, Poughkeepsie, New York 12601
(ENGER at PKEDVM9, (enger@vnet.ibm.com). Mr. Enger is an advisory
engineer in the Integrated Systems Product Engineering Department at
the IBM Poughkeepsie Development Laboratory. He joined IBM
in 1968 after receiving a B.S. degree in engineering from George
Washington University. Mr. Enger joined Product Engineering in 1981.
Since 1985 he has specialized in installation planning and the effects
of computer room environments on system reliability. He has
received an IBM Data Systems Division Award for his work on the
introduction of the IBM 3090 system.
Allen H. Taber
Loral Federal Systems Company, Route 17C, Owego, New York 13827 (ATABER
at OWGVM3, (ataber@owgvm3.vnet.ibm.com). Since 1992, Mr. Taber
has managed the Electromagnetic Effects group at Loral Federal
Systems in Owego, New York. Prior to the sale of IBM
Federal Systems to Loral, he was an advisory engineer/scientist in
this same group. He was responsible for nuclear survivability and
single-event upset research and evaluation on many types of
semiconductor devices and systems, including the E3/AWACS, Space
Shuttle, and Space Station programs. From 1984 to 1986, Mr. Taber was a
member of the IBM Owego Memory System Development group, where he
designed a set of nonvolatile data storage cards for the North Warning
System. Until 1984, he was a member of Monolithic Memory Devices at IBM
in Manassas, Virginia. In that group, he obtained experience in
radiation effects and device physics by performing transient upset,
total dose, single-particle upset, SCR latchup, data retention, and
performance testing on monolithic memory devices. Mr. Taber received
his B.S. in physics in 1977 from the College of William and Mary.
Vikram R. Tolat
IBM Corporation, Route 100, Somers, New York 10589 (TOLAT at RHQVM10,
(tolat@vnet.ibm.com). Mr. Tolat received a B.S. degree in
electrical engineering and joined IBM Manufacturing Research in 1962 at
Kingston. He pursued the Graduate Work Study program, receiving an
M.S. degree in management engineering from RPI in 1967 and an M.S.
in semiconductor physics from Syracuse University in 1974. He completed
the required course work for a Ph.D. from Syracuse University in
electrical engineering in 1976. During his 33-year career with IBM, Mr.
Tolat has held engineering and management positions in Product
Assurance and Semiconductor Device Development, on the Systems Division
staff, and at Corporate Headquarters. He is a Program Director,
responsible for company-wide Technical Recognition Programs since 1989.
H. W. Curtis, B. Chin, C. A. Russell, L. B. Freeman,
P. Hosier, L. E. LaFave, J. L. Walsh, G. J. Unger, B. Messina, A. J.
Sykes, H. Yourke, R. J. Sussman, W. A. Klein, and C. W. Wauhaus have
retired from the IBM Corporation.
*PowerPC is a trademark of International Business Machines
Corporation.
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